InSb Hall Effect Elements CYSH12AF, Max. Sensitivity: 7.84 - 16.6 (mV/mT)

InSb Hall Effect Elements CYSH12AF, Max. Sensitivity: 7.84 - 16.6 (mV/mT)
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Hall-effect element CYSH12AF is made of compound semiconductor material indium stibnite (InSb),... more
Product information "InSb Hall Effect Elements CYSH12AF, Max. Sensitivity: 7.84 - 16.6 (mV/mT)"

Hall-effect element CYSH12AF is made of compound semiconductor material indium stibnite (InSb), which utilizes the Hall-effect principle. It can convert a magnetic flux density signal linearly into voltage output. It is new generation of Hall Effect element CYTY101A.

 Characteristics

  • High Magnetic Sensitivity 
  • Low Offset Voltage 
  • Miniature Package 

Application

  • Magnetic Field Measurement 
  • Current Sensor 
  • Detection of Speed 
  • DC Brushless Motor 
  • Position Control 

Technical Properties

Operating Temperature: -40°C ~ +110°C
Max. Supply: 20mA
Input/Output Resistance: 240 ~ 550kΩ/240 ~ 550kΩ
Max. Sensitivity: 7.84 ~ 16.6 mV/mT
Package/Size: SOT-143/2.9x1.5x1.1mm
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