Linear Hall Effect Sensors Elements CYSJ106C, Max. Sensitivity: 1.8 - 2.4 (mV/mT), Measuring range: 3T

Linear Hall Effect Sensors Elements CYSJ106C, Max. Sensitivity: 1.8 - 2.4 (mV/mT), Measuring range: 3T
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until 5 € 1.93 *
from 6 € 1.61 *
from 11 € 1.35 *
from 21 € 1.12 *
from 51 € 0.93 *

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CYSJ106C series Hall-effect element is a ion-implanted magnetic field sensor made of monocrystal... more
Product information "Linear Hall Effect Sensors Elements CYSJ106C, Max. Sensitivity: 1.8 - 2.4 (mV/mT), Measuring range: 3T"

CYSJ106C series Hall-effect element is a ion-implanted magnetic field sensor made of monocrystal gallium arsenide (GaAs) semiconductor material group Ⅲ-V using ion-implanted technology. It can convert a magnetic flux density signal linearly into voltage output.

 Characteristics

  • High Linearity 
  • Superior Temperature Stability 
  • Miniature Package 
  • Wide measuring range 0-3T

Application

  •  Magnetic Field Measurement 
  • DC Brushless Motor 
  • Current Sensor 
  • Non-contact Switch 
  • Position Control 
  • Detection Of Revolution

Technical Properties

Input/Output Resistance: 650 ~ 850 kΩ/ 650 ~ 850kΩ
Max. Supply: 13mA/10V
Linearity: 2%
Max. Sensitivity: 1.8 ~ 2.4 mV/mT
Measuring range: 3T
Package/Size: SMT/1.5x1.5x0.6mm
Operating Temperature: -40°C ~ +125°C
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