Linear Hall Effect Sensors Elements CYSJ302C, Max. Sensitivity: 1.8-2.5 (mV/mT), Measuring range: 3T

Linear Hall Effect Sensors Elements CYSJ302C, Max. Sensitivity: 1.8-2.5 (mV/mT), Measuring range: 3T
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CYSJ302C series Hall-effect element is a ion-implanted magnetic field sensor made of monocrystal... more
Product information "Linear Hall Effect Sensors Elements CYSJ302C, Max. Sensitivity: 1.8-2.5 (mV/mT), Measuring range: 3T"

CYSJ302C series Hall-effect element is a ion-implanted magnetic field sensor made of monocrystal gallium arsenide (GaAs) semiconductor material group III-V using ion-implanted technology. It can convert a magnetic flux density signal linearly into voltage output. 

Characteristics

  • High Linearity 
  • Superior Temperature Stability 
  • Miniature Package 
  • Replacements of THS119, KSY14 and KSY44 etc.

Application

  •  Magnetic Field Measurement 
  • DC Brushless Motor 
  • Current Sensor 
  • Non-contact Switch 
  • Position Control 
  • Detection of Revolution

Technical Properties

Input/Output Resistance: 650 ~ 850 kΩ/ 650 ~ 850kΩ
Max. Supply: 10V
Linearity: 2%
Max. Sensitivity: 1.8 ~ 2.5 mV/mT
Measuring range: 3T
Package/Size: SIP/2.7x2.35x0.95mm
Operating Temperature: -40°C ~ +125°C
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