Linear Hall Effect Sensors Elements CYTHS124, Max. Sensitivity: 3.1-4.0 (mV/mT), Measuring range: 2T

Linear Hall Effect Sensors Elements CYTHS124, Max. Sensitivity: 3.1-4.0 (mV/mT), Measuring range: 2T
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CYTHS124 Hall-effect element is a ion-implanted magnetic field sensor made of mono-crystal... more
Product information "Linear Hall Effect Sensors Elements CYTHS124, Max. Sensitivity: 3.1-4.0 (mV/mT), Measuring range: 2T"

CYTHS124 Hall-effect element is a ion-implanted magnetic field sensor made of mono-crystal gallium arsenide (GaAs) semiconductor material group III-V using ion-implanted technology. It can convert a magnetic flux density signal linearly into voltage output.

Characteristics:

  • Excellent Temperature Characteristics
  • Wide Operating Temperature Range
  • Excellent Output Voltage Linearity
  • High Internal Resistance
  • Low Residual Voltage Ratio

Application:

  • High stability motor control
  • Digital tachometer
  • Crank shaft position sensor

 

 

 


Technical Properties

Max. Supply: 12V
Operating Temperature: -55°C ~ +125°C
Input/Output Resistance: 1000 ~ 1500 kΩ/ 1800 ~ 3000kΩ
Linearity: 2%
Package/Size: SOT-143/2.9x1.5x1.1mm
Max. Sensitivity: 3.1 ~ 4.0 mV/mT
Measuring range: 2T
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