GaAs Hall Effect Element CYSJ106DFN
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until 9 | € 3.96 * |
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from 200 | € 1.98 * |
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from 1000 | € 1.43 * |
from 3000 | € 1.29 * |
from 5000 | € 1.14 * |
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Ready for shipping, delivery time 1-3 workdays
for quantities up to available stock of 995 pieces (3-4 weeks if more)
- Article-Nr: CYSJ106DFN
- Serial-Nr: CYSJ106DFN
- Request on this Article
- Data Sheet Download
- Data Sheet Download (German)
CYSJ106DFN series Hall-effect element is an ion-implanted magnetic field sensor made of... more
GaAs Hall Effect Element CYSJ106DFN
CYSJ106DFN series Hall-effect element is an ion-implanted magnetic field sensor made of mono-crystal gallium arsenide (GaAs) semiconductor material group Ⅲ-V using ion-implanted technology. It can convert a magnetic flux density signal linearly into voltage output.
FEATURES
- High Linearity
- Superior Temperature Stability
- Miniature Package
- Wide measuring range 0-3T
TYPICAL APPLICATION
- Magnetic Field Measurement
- DC Brushless Motor
- Current Sensor
- Non-contact Switch
- Position Control
- Detection Of Revolution
Information about product safety:
Manufacturer/ EU Responsible Person:
Company name: ChenYang Technologies GmbH & Co.KG
Address: Markt Schwabener Str. 8; 85464 Finsing; Deutschland
E-Mail: info@chenyang.de
Phone: +49 8121 2574100
Operating Temperature: | -40°C ~ +125°C |
Measuring range: | 3T |
Max. Sensitivity: | 1.80 ~ 2.4 mV/mT |
Linearity: | 2% |
Input/Output Resistance: | 650 ~ 850 kΩ/ 650 ~ 850kΩ |
Package/Size: | DFN/1.2x0.5x0.3mm |
Max. Supply current/voltage: | 11mA/9.5V |
Data sheets to download:
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