GaAs Hall Effect Element CYSJ106DFN
| Quantity | Unit price |
|---|---|
| Until 9 |
€3.96
|
| From 10 |
€3.45
|
| From 20 |
€3.00
|
| From 50 |
€2.61
|
| From 100 |
€2.26
|
| From 200 |
€1.98
|
| From 500 |
€1.71
|
Shipping ready, delivery time 1-3 workdays
for quantities up to 888 pieces,
delivery time 3-4 weeks for more
Product information "GaAs Hall Effect Element CYSJ106DFN"
CYSJ106DFN series Hall-effect element is an ion-implanted magnetic field sensor made of mono-crystal gallium arsenide (GaAs) semiconductor material group Ⅲ-V using ion-implanted technology. It can convert a magnetic flux density signal linearly into voltage output.
FEATURES
- High Linearity
- Superior Temperature Stability
- Miniature Package
- Wide measuring range 0-3T
TYPICAL APPLICATION
- Magnetic Field Measurement
- DC Brushless Motor
- Current Sensor
- Non-contact Switch
- Position Control
- Detection Of Revolution
Information about product safety:
Manufacturer/ EU Responsible Person:
Company name: ChenYang Technologies GmbH & Co.KG
Address: Markt Schwabener Str. 8; 85464 Finsing; Deutschland
E-Mail: info@chenyang.de
Phone: +49 8121 2574100
| Input/Output Resistance: | 650 ~ 850 kΩ/ 650 ~ 850kΩ |
|---|---|
| Linearity: | 2% |
| Max. Sensitivity: | 1.80 ~ 2.4 mV/mT |
| Max. Supply current/voltage: | 11mA/9.5V |
| Measuring Range: | 3T |
| Operating Temperature: | -40°C ~ +125°C |
| Package/Size: | DFN/1.2x0.5x0.3mm |
Manufacturer:
Company name: ChenYang Technologies GmbH & Co.KG
Address: Markt Schwabener Str. 8; 85464 Finsing; Deutschland
E-Mail: info@chenyang.de
Phone: +49 8121 2574100