Linear Hall Effect Sensors Elements CYSJ106C, Max. Sensitivity: 1.8 - 2.4 (mV/mT), Measuring range: 3T

Linear Hall Effect Sensors Elements CYSJ106C, Max. Sensitivity: 1.8 - 2.4 (mV/mT), Measuring range: 3T
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from 10 € 1.77 *
from 20 € 1.48 *
from 50 € 1.23 *
from 100 € 1.02 *
from 200 € 0.86 *
from 500 € 0.70 *
from 1000 € 0.60 *
from 3000 € 0.49 *
from 5000 € 0.46 *

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Description Technical Properties Data Sheets
Description
CYSJ106C series Hall-effect element is a ion-implanted magnetic field sensor made of monocrystal... more
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Linear Hall Effect Sensors Elements CYSJ106C, Max. Sensitivity: 1.8 - 2.4 (mV/mT), Measuring range: 3T

CYSJ106C series Hall-effect element is a ion-implanted magnetic field sensor made of monocrystal gallium arsenide (GaAs) semiconductor material group Ⅲ-V using ion-implanted technology. It can convert a magnetic flux density signal linearly into voltage output.

 Characteristics

  • High Linearity 
  • Superior Temperature Stability 
  • Miniature Package 
  • Wide measuring range 0-3T

Application

  • Magnetic Field Measurement 
  • DC Brushless Motor 
  • Current Sensor 
  • Non-contact Switch 
  • Position Control 
  • Detection Of Revolution
Technical Properties
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Operating Temperature: -40°C ~ +125°C
Measuring range: 3T
Package/Size: SMT/1.5x1.5x0.6mm
Max. Sensitivity: 1.80 ~ 2.4 mV/mT
Linearity: 2%
Input/Output Resistance: 650 ~ 850 kΩ/ 650 ~ 850kΩ
Max. Supply current/voltage: 13 mA/10 V
Data Sheets
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Data sheets to download:
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