Linear Hall Effect Sensors Elements CYSJ166A, Max. Sensitivity: 3.1-4.1 (mV/mT), Measuring range: 3T

Linear Hall Effect Sensors Elements CYSJ166A, Max. Sensitivity: 3.1-4.1 (mV/mT), Measuring range: 3T
Quantity Unit price
until 9 € 2.12 *
from 10 € 1.77 *
from 20 € 1.48 *
from 50 € 1.23 *
from 100 € 1.02 *
from 200 € 0.86 *
from 500 € 0.70 *
from 1000 € 0.60 *
from 3000 € 0.49 *
from 5000 € 0.46 *

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CYSJ166A series Hall-effect element is a ion-implanted magnetic field sensor made of monocrystal... more
Linear Hall Effect Sensors Elements CYSJ166A, Max. Sensitivity: 3.1-4.1 (mV/mT), Measuring range: 3T

CYSJ166A series Hall-effect element is a ion-implanted magnetic field sensor made of monocrystal gallium arsenide (GaAs) semiconductor material group Ⅲ-V using ion-implanted technology. It can convert a magnetic flux density signal linearly into voltage output.

 Characteristics

  • High Linearity 
  • Superior Temperature Stability 
  • Miniature Package 
  • Wide measuring range 0-3T

Application

  • Magnetic Field Measurement 
  • DC Brushless Motor 
  • Current Sensor 
  • Non-contact Switch 
  • Position Control 
  • Detection Of Revolution
Operating Temperature: -40°C ~ +125°C
Measuring range: 3T
Package/Size: SMT/1.5x1.5x0.6mm
Max. Sensitivity: 1.80 ~ 2.5 mV/mT
Linearity: 2%
Input/Output Resistance: 1000 ~ 1500 kΩ/ 1800 ~ 3000kΩ
Max. Supply current/voltage: 12.0 V
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