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InSb Hall Effect Elements CYSH12AF, Max. Sensitivity: 7.84 - 16.6 (mV/mT)

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Shipping ready, delivery time 1-3 workdays
for quantities up to 37114 pieces,
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Serial-Nr: CYSH12AF
Article-Nr: CYSH12AF

Product information "InSb Hall Effect Elements CYSH12AF, Max. Sensitivity: 7.84 - 16.6 (mV/mT)"

Hall-effect element CYSH12AF is made of compound semiconductor material indium stibnite (InSb), which utilizes the Hall-effect principle. It can convert a magnetic flux density signal linearly into voltage output. It is new generation of Hall Effect element CYTY101A.

 Characteristics

  • High Magnetic Sensitivity 
  • Low Offset Voltage 
  • Miniature Package 

Application

  • Magnetic Field Measurement 
  • Current Sensor 
  • Detection of Speed 
  • DC Brushless Motor 
  • Position Control 
Input/Output Resistance: 240 ~ 550kΩ/240 ~ 550kΩ
Max. Sensitivity: 7.84 ~ 16.6 mV/mT
Max. Supply current/voltage: 20 mA
Operating Temperature: -40°C ~ +110°C
Package/Size: SOT143/2.9x1.5x1.1mm

Manufacturer:

Company name: ChenYang Technologies GmbH & Co.KG

Address: Markt Schwabener Str. 8; 85464 Finsing; Deutschland

E-Mail: info@chenyang.de

Phone: +49 8121 2574100

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