InSb Hall Effect Elements CYSH12AF, Max. Sensitivity: 7.84 - 16.6 (mV/mT)

InSb Hall Effect Elements CYSH12AF, Max. Sensitivity: 7.84 - 16.6 (mV/mT)
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until 9 € 0.50 *
from 10 € 0.42 *
from 20 € 0.35 *
from 50 € 0.29 *
from 100 € 0.24 *
from 200 € 0.20 *
from 500 € 0.17 *
from 1000 € 0.14 *
from 3000 € 0.13 *

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Description Technical Properties Data Sheets
Description
Hall-effect element CYSH12AF is made of compound semiconductor material indium stibnite (InSb),... more
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InSb Hall Effect Elements CYSH12AF, Max. Sensitivity: 7.84 - 16.6 (mV/mT)

Hall-effect element CYSH12AF is made of compound semiconductor material indium stibnite (InSb), which utilizes the Hall-effect principle. It can convert a magnetic flux density signal linearly into voltage output. It is new generation of Hall Effect element CYTY101A.

 Characteristics

  • High Magnetic Sensitivity 
  • Low Offset Voltage 
  • Miniature Package 

Application

  • Magnetic Field Measurement 
  • Current Sensor 
  • Detection of Speed 
  • DC Brushless Motor 
  • Position Control 
Technical Properties
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Package/Size: SOT143/2.9x1.5x1.1mm
Max. Sensitivity: 7.84 ~ 16.6 mV/mT
Input/Output Resistance: 240 ~ 550kΩ/240 ~ 550kΩ
Max. Supply current/voltage: 20 mA
Operating Temperature: -40°C ~ +110°C
Data Sheets
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Data sheets to download:
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