InSb Hall Effect Elements CYSH12AF, Max. Sensitivity: 7.84 - 16.6 (mV/mT)
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- Article-Nr: CYSH12AF
- Serial-Nr: CYSH12AF
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- Data Sheet Download (German)
Hall-effect element CYSH12AF is made of compound semiconductor material indium stibnite (InSb),... more
Product information "InSb Hall Effect Elements CYSH12AF, Max. Sensitivity: 7.84 - 16.6 (mV/mT)"
Hall-effect element CYSH12AF is made of compound semiconductor material indium stibnite (InSb), which utilizes the Hall-effect principle. It can convert a magnetic flux density signal linearly into voltage output. It is new generation of Hall Effect element CYTY101A.
Characteristics
- High Magnetic Sensitivity
- Low Offset Voltage
- Miniature Package
Application
- Magnetic Field Measurement
- Current Sensor
- Detection of Speed
- DC Brushless Motor
- Position Control
Technical Properties
Operating Temperature: | -40°C ~ +110°C |
Max. Supply: | 20mA |
Input/Output Resistance: | 240 ~ 550kΩ/240 ~ 550kΩ |
Max. Sensitivity: | 7.84 ~ 16.6 mV/mT |
Package/Size: | SOT-143/2.9x1.5x1.1mm |
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